IR51HD320 |
RFQ for IR51HD320 Required Field |
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| Product | Manufacturers | Pack | D/C |
| IR51HD320 | - | IR | 98+ |
The IR51HD320 is a high voltage, high speed, self- oscillating half-bridge. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control circuit has a zener clamp to simplify offline operation. The output features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in the half-bridge. Propagation delays for the high and low side power MOSFETs are matched to simplify use in 50% duty cycle applications. The device can operate up to 400 volts.
Features |
| ·Output Power MOSFETs in half-bridge configuratio 400V Rated Breakdown Voltage·High side gate drive designed for bootstrap operatio·Bootstrap diode integrated into package·Accurate timing control for both Power MOSFETs Matched delay to get 50% duty cycle Matched deadtime of 1.2us·Internal oscillator with programmable frequency·Zener clamped Vcc for offline operation·Half-bridge output is out of phase with R T |
| Symbol | Parameter | Min. | Max. | Units |
| Definition | ||||
| VIN | High Voltage Supply | -0.3 | 400 | V |
| VB | High Side Floating Supply Absolute Voltage | -0.3 | 425 | |
| VO | Half-Bridge Output Voltag | -0.3 | VIN + 0.3 | |
| VRT | RT Voltage |
-0.3 | VCC + 0.3 | |
| VCT | TC Voltage |
-0.3 | VCC + 0.3 | |
| ICC | Supply Current (Note 1) | --- | 25 | mA |
| IRT | RT Output Current |
-5 | 5 | |
| dv/dt | Peak Diode Recovery dv/dt | --- | 4.0 | V/ns |
| PD | Package Power Dissipation @ TA +25 |
--- | 2.00 | W |
| RJA | Thermal Resistance, Junction to Ambient | --- | 60 | /W |
| TJ | Junction Temperature | -55 | 150 | |
| TS | Storage Temperature | -55 | 150 | |
| TL | Lead Temperature (Soldering, 10 seconds) | --- | 300 |
